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NJG1108HA8
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GPS LOW NOISE AMPLIFIER GaAs MMIC
GENERAL DESCRIPTION This IC is a Low Noise Amplifier GaAs MMIC designed for GPS This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply. This IC has the function of Stand-by mode. This amplifier can be tuned to wide frequency point (1.5GHz~2.4GHz). An ultra small and ultra thin package of USB6-A8 is adopted. FEATURES Low voltage operation Low current consumption High small signal gain Low noise figure Pin at 1dB Gain Compression point High Input IP3 Ultra small & ultra thin package PIN CONFIGURATION
HA8 Type (Top View)
GND
PACKAGE OUTLINE
NJG1108HA8
+2.7V typ. 2.0mA typ. @VCTL=1.85V 1uA typ. @VCTL=0V 19dB typ. @f VCTL=1.85V, f=1.575GHz 1.0dB typ. @ VCTL=1.85V, f=1.575GHz -15.0dBm typ. @VCTL=1.85V, f=1.575GHz 0dBm typ. @ VCTL=1.85V, f=1.575+1.5751GHz USB6-A8 (Package size: 1.0x1.2x0.38mm)
3
RFOUT
RFIN
4
2
Bias Circuit
Pin Connection 1. VINV 2. RFOUT 3. GND 4. RFIN 5. GND 6. VCTL
GND
VINV
5
Logic Circuit
1
VCTL
6
TRUTH TABLE
"H"=VCTL(H), "L"=VCTL(L)
VCTL H L
LNA Mode Active Mode Sleep Mode
Note: Specifications and description listed in this catalog are subject to change without notice.
Ver.2006-08-25
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NJG1108HA8
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ABSOLUTE MAXIMUM RATINGS Ta=+25C, Zs=Zl=50ohm PARAMETER Drain Voltage Inverter voltage Control voltage Input power Power dissipation Operating temperature Storage temperature SYMBOL VDD VINV VCTL Pin PD Topr Tstg VDD=2.7V On PCB board, Tjmax=150C CONDITIONS RATINGS 5.0 5.0 5.0 +15 150 -40~+85 -55~+150 UNITS V V V dBm mW C C
ELECTRICAL CHARACTERISTICS 1 GENERAL CONDITIONS: VDD=VINV=2.7V, Ta=+25C, Zs=Zl=50ohm PARAMETERS Operating voltage Inverter supply voltage Control voltage (High) Control voltage (Low) Operating current1 (Active Mode, RF OFF) Operating current2 (Sleep Mode, RF OFF) Inverter current1 Inverter current2 Control current SYMBOL VDD VINV VCTL(H) VCTL(L) IDD1 IDD2 IINV1 IINV2 ICTL RF OFF, VCTL=1.85V RF OFF, VCTL=0V RF OFF, VCTL=1.85V RF OFF, VCTL=0V RF OFF, VCTL=1.85V CONDITIONS MIN 2.5 2.5 1.5 0 TYP 2.7 2.7 1.85 0 2.0 1 30 9 6 MAX 3.5 3.5 UNITS V V V V mA A A A A
VINV+0.3
0.3 3.0 5 60 20 20
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NJG1108HA8
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ELECTRICAL CHARACTERISTICS 2 (Active Mode, RF OFF) GENERAL CONDITIONS: VDD=VINV=2.7V, VCTL=1.85V, fRF=1575MHz, Ta=+25C, Zs=Zl=50ohm PARAMETERS Operating Frequency Small signal gain Noise figure Pin at 1dB gain compression point Input 3rd order intercept point RF IN VSWR RF OUT VSWR SYMBOL freq Gain NF P-1dB(IN) IIP3 VSWRi VSWRo f1=fRF, f2=fRF+100kHz, Pin=-34dBm Exclude PCB & connector losses (IN: 0.09dB) CONDITIONS MIN 1.57 17.0 -19.0 -5.0 TYP 1.575 19.0 1.0 -15.0 0 2.0 1.5 MAX 1.58 21.5 1.2 2.5 2.0 UNITS GHz dB dB dBm dBm
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NJG1108HA8
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TERMINAL INFORMATION No. SYMBOL DESCRIPTION
1
VINV
Power supply pin of the inverter circuit. RF Output and voltage supply pin. External matching circuits and a bypass capacitor is required. L3 is a RF choke inductor. These elements are used as output matching circuit. Ground pin. To keep good RF grounding performance, please use multiple via holes to connect with ground plane and this pin.) RF input pin. A DC blocking capacitor is not required. An external matching circuit is required. Ground pin. To keep good RF grounding performance, please use multiple via holes to connect with ground plane and this pin.) Control voltage input pin. This control pin is set to high. LNA suffers from standby state when LNA puts the changeover voltage of "Low" in a state of movement when the changeover voltage of "High" is put in this terminal.
2
RFOUT
3
GND
4
RFIN
5
GND
6
VCTL
CAUTION 1) Ground terminal (3, 5) should be connected to the ground plane as low inductance as possible.
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NJG1108HA8
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ELECTRICAL CHARACTERISTICS (Condition: Ta=+25C, VDD=VINV=2.7V, VCTL=1.85V, Zs=Zl=50ohm)
Pout vs. Pin
10 5 0 (fRF=1575MHz) 24 22 20
Gain, IDD vs. Pin
(fRF=1575MHz) 8 7
Gain
6
Pout (dBm)
Gain (dB)
Pout
-5 -10 -15 -20 -25 -40 P-1dB(IN)=-15.0dBm
16 14 12 10 8 -40 P-1dB(IN)=-15.0dBm
IDD
4 3 2 1 0
-30
-20
-10
0
10
-30
-20
-10
0
10
Pin (dBm)
Pin (dBm)
NF vs. frequency
4 (Exclude PCB, Connector Losses) 3.5
Pout, IM3 vs. Pin
20 (fRF=1575+1575.1MHz)
0
Pout
Noise Figure (dB)
Pout, IM3 (dBm)
3 2.5 2 1.5 1
-20
-40
NF
-60
IM3
-80 IIP3=+2.4dBm
0.5 0 1.5
1.55
1.6
1.65
-100 -40
-30
-20
-10
0
10
frequency (GHz)
Pin (dBm)
k factor vs. frequency
20
15
k factor
10
5
0 0 5 10 15 20
frequency (GHz)
-5-
IDD (mA)
18
5
NJG1108HA8
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ELECTRICAL CHARACTERISTICS (Condition: Ta=+25C, VDD=VINV=2.7V, VCTL=1.85V, Zs=Zl=50ohm)
Gain, NF vs. VDD, VINV
24 22 20 (fRF=1575MHz) 4 3.5 -8 -10
P-1dB(IN) vs. VDD, VINV
(fRF=1575MHz)
P-1dB(IN) (dBm)
Gain
3
-12 -14 -16 -18 -20 -22 -24 2.5
Gain (dB)
16 14
2 1.5
NF
12 10 8 2.5 1 0.5 0 3 3.5 4
NF (dB)
18
2.5
P-1dB(IN)
3
3.5
4
VDD, VINV (V)
VDD, VINV (V)
OIP3, IIP3 vs. VDD, VINV
26 24 22 (fRF=1575+1575.1MHz, Pin=-34dBm) 12 10 5
VSWR vs. VDD, VINV
(fRF=1575MHz)
OIP3
20 18 16 14 12 10 2.5
6 4 2 0
VSWRi, VSWRo
8
4
VSWRi VSWRo
OIP3 (dBm)
IIP3 (dBm)
3
2
IIP3
1 -2 -4 3 3.5 4 0 2.5
3
3.5
4
VDD, VINV (V)
VDD, VINV (V)
IDD vs. VDD, VINV
5 (RF OFF)
4
IDD (mA)
3
IDD
2
1
0 2.5
3
3.5
4
VDD, VINV (V)
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NJG1108HA8
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ELECTRICAL CHARACTERISTICS (Condition: Ta=+25C, VDD=VINV=2.7V, VCTL=1.85V, Zs=Zl=50ohm)
Gain, NF vs. Temperature
22 20 (fRF=1575MHz) 7 6 -8 -10
P-1dB(IN) vs. Temperature
(fRF=1575MHz)
Gain
18 5 4 3
P-1dB(IN) (dBm)
-12 -14 -16 -18 -20 -22 -24 -50
Gain (dB)
16 14 12 10 8 -50
NF
2 1 0 100
0
50
NF (dB)
P-1dB(IN)
0
50
100
Temperature (oC)
Temperature (oC)
OIP3, IIP3 vs. Temperature
25 (fRF=1575+1575.1MHz, Pin=-34dBm) 20 5
VSWR vs. Temperature
(f=1575MHz)
20
15
4
VSWRi VSWRo
OIP3 OIP3 (dBm) IIP3 (dBm)
15 10
VSWRi, VSWRo
3
10
5
2
5
IIP3
0
1
0 -50
0
50
o
-5 100
0 -50
0
50
100
Temperature ( C)
Temperature (oC)
IDD vs. Temperature
5 (RF OFF) 3
IDD vs. VCTL
(RF OFF)
4
2.5
IDD
2
IDD (mA)
3
IDD (mA)
IDD
2
1.5 +85oC -40oC
-40oC -25oC 0oC +25oC
1 1
0.5
+50oC +85oC
0 -50
0 0 50 100 0 0.5 1 1.5 2 2.5 3
Temperature (oC)
VCTL (V)
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NJG1108HA8
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ELECTRICAL CHARACTERISTICS (Condition: Ta=+25C, VDD=VINV=2.7V, VCTL=1.85V, Zs=Zl=50ohm)
S11, S22
S21, S12
VSWR
Zin, Zout
S11, S22 (f=50MHz~20GHz)
S21, S12 (f=50MHz~20GHz)
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NJG1108HA8
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TEST CIRCUIT
(Top View)
GND
3
RFOUT
L2 10nH
RFIN
L4 15nH L3 12nH
C1 100pF
RF IN
L1 39nH
4
2
RF OUT
VDD=2.7V
C2 1000pF
Bias Circuit
GND
VINV
5
Logic Circuit
1
VINV=2.7V
C3 1000pF
VCTL
6
VCTL=0V or 1.85V
C4 1000pF
RECOMMENDED DESIGN (Top View)
Parts List Parts ID L1~L4 Notes MURATA (LQP03T series) MURATA (GRM03 series)
VDD
C1~C3 C2 RF IN L2 L1 C4 L3 L4 C3 C1 RF OUT
VCTL
VINV
PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH =0.4mm (Z0=50ohm) PCB SIZE=17.0mmx17.0mm
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NJG1108HA8
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PACKAGE OUTLINE (USB6-A8)
0.380.06
+0.012 0.038-0.009
S
0.03
S
TERMINAL TREAT Substrate Molding material UNIT WEIGHT
:Au :FR5 :Epoxy resin :mm :1.1mg
0.2 (MIN0.15) 6 5 1.20.05
0.20.04 C0.1 R0.05 1 0.10.05
Photo resist coating
0.8 0.4 0.6 0.20.04 2 3 0.4 1.00.05 0.20.07
4
Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages.
[CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.
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